A technical paper titled “28 nm high-k-metal gate ferroelectric field effect transistors based synapses- A comprehensive overview” was published by researchers at Fraunhofer-Institut für Photonische Mikrosysteme IPMS, Indian Institute of Technology Madras, and GlobalFoundries. Abstract This invited article we present a comprehensive overview of 28 nm high-k-metal gate-based ferroelectric field effect transistor devices for synaptic... » read more
